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Ultra-High-Efficiency White
LED Drivers
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1; V IN = 3.3V, SETI = BITA = BITB = BITC = SEL = IN, MODE = GND, C OUT = 4.7μF, C REF = 0.22μF, T A = -40 ° C to
+85 ° C , unless otherwise noted.) (Note 3)
PARAMETER
IN Supply Range
IN Undervoltage Lockout Threshold
IN Quiescent Current
REF Output Voltage
CONDITIONS
50mV typical hysteresis
BITA = BITB = BITC = IN, LD1 to LD8 = GND
I REF = 0
MIN
2.7
2.2
1.230
TYP
MAX
5.5
2.6
600
1.270
UNITS
V
V
μA
V
REF Line Regulation
REF Load Regulation
Oscillator Frequency
2.7V < V IN < 5.5V
-1μA < I REF < +50μA
0.8
5
15
1.2
mV
mV
MHz
OUT Overvoltage Protection
Threshold
V LD1 to V LD8 = 50mV, OUT rising, 100mV typical
hysteresis
5.1
5.5
V
INTERNAL MOSFET SWITCHES
N-Channel MOSFET On-Resistance
P-Channel MOSFET On-Resistance
I LX = 200mA
I LX = 200mA
MAX1984
0.50
0.8
1.0
0.81
?
?
N-Channel MOSFET Current Limit
MAX1985
MAX1986
0.40
0.30
0.65
0.52
A
CONTROL INPUTS
BITA, BITB, BITC Input Logic Low
Level
BITA, BITB, BITC Input Logic High
Level
MODE Input Logic Low Level
MODE Input Logic High Level
SEL Input Logic Low Level
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
1.6
V IN - 0.4
0.4
0.4
0.4
V
V
V
V
V
SEL Input Logic Midlevel
SEL Input Logic High Level
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
0.50
2.05
1.85
V
V
FULL-SCALE LED CURRENT ADJUSTMENT
V LD _ = 80mV, SETI = BITA = BITB = BITC = IN
V LD _ = 80mV, R SETI = 278k ? ±1%, BITA = BITB =
BITC = IN
16
22
20
28
LD1 to LD8 Output Current
V LD _ = 80mV, R SETI = 1.8M ? ±1%, BITA = BITB =
BITC = IN
V LD_ = 80mV, R SETI = 697k ? ±1%, BITA = BITB =
BITC = IN
SETI = GND
11.5
15.5
0.42
16.0
20.0
0.60
mA
4
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